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By ndash Mohit Patel
Introductionbull Non-volatile
ndash Information is saved even when there is no power
bull Immediate boot upndash No need to wait for your computer to boot up
bull MRAM SRAM and DRAMndash MRAM is potentially capable of replacing both DRAM
SRAM and many advantages over technology currently used in electronic devices
bull DRAMndash Advantages cheapndash Disadvantages Comparatively slow and loses data when
power is off
bull SRAMndash Advantages fast ndash Disadvantages cost up to 4 times as much as DRAM and
loses data when power is off
bull Flash memoryndash Advantages save data when power is offndash Disadvantages saving data is slow and use lot of power
bull Power efficiencyndash MRAM can be the most efficient memory device in power
consumption
bull Ferro-magnetndash Ferro-magnet is the type of material used to create a MTJ
to develop MRAM
Historical Overview
Why MRAM Became an Important Research Topic Universal Memory (Computing amp Electronics)
ldquoInstant-Onrdquo Computing
Read amp Write to Memory Faster
Reduced Power Consumption
Save Data in Case of a Power Failure
Modern MRAM Technology Emerged from Several Technologies Magnetic Core Memory
Magneto resistive RAM
Giant Magneto resistance
What is MRAMbull Magnetic RAM is a methods of storing data bits using
magnetic charges instead of the electrical charges bull MRAM is a memory (RAM) technology that uses
electron spin to store information MRAM has been called the ideal memory potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk and all this while consuming a very low amount of power
bull MRAM can resist high radiation and can operate in extreme temperature conditions very suited for military and space applications
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Introductionbull Non-volatile
ndash Information is saved even when there is no power
bull Immediate boot upndash No need to wait for your computer to boot up
bull MRAM SRAM and DRAMndash MRAM is potentially capable of replacing both DRAM
SRAM and many advantages over technology currently used in electronic devices
bull DRAMndash Advantages cheapndash Disadvantages Comparatively slow and loses data when
power is off
bull SRAMndash Advantages fast ndash Disadvantages cost up to 4 times as much as DRAM and
loses data when power is off
bull Flash memoryndash Advantages save data when power is offndash Disadvantages saving data is slow and use lot of power
bull Power efficiencyndash MRAM can be the most efficient memory device in power
consumption
bull Ferro-magnetndash Ferro-magnet is the type of material used to create a MTJ
to develop MRAM
Historical Overview
Why MRAM Became an Important Research Topic Universal Memory (Computing amp Electronics)
ldquoInstant-Onrdquo Computing
Read amp Write to Memory Faster
Reduced Power Consumption
Save Data in Case of a Power Failure
Modern MRAM Technology Emerged from Several Technologies Magnetic Core Memory
Magneto resistive RAM
Giant Magneto resistance
What is MRAMbull Magnetic RAM is a methods of storing data bits using
magnetic charges instead of the electrical charges bull MRAM is a memory (RAM) technology that uses
electron spin to store information MRAM has been called the ideal memory potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk and all this while consuming a very low amount of power
bull MRAM can resist high radiation and can operate in extreme temperature conditions very suited for military and space applications
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
bull DRAMndash Advantages cheapndash Disadvantages Comparatively slow and loses data when
power is off
bull SRAMndash Advantages fast ndash Disadvantages cost up to 4 times as much as DRAM and
loses data when power is off
bull Flash memoryndash Advantages save data when power is offndash Disadvantages saving data is slow and use lot of power
bull Power efficiencyndash MRAM can be the most efficient memory device in power
consumption
bull Ferro-magnetndash Ferro-magnet is the type of material used to create a MTJ
to develop MRAM
Historical Overview
Why MRAM Became an Important Research Topic Universal Memory (Computing amp Electronics)
ldquoInstant-Onrdquo Computing
Read amp Write to Memory Faster
Reduced Power Consumption
Save Data in Case of a Power Failure
Modern MRAM Technology Emerged from Several Technologies Magnetic Core Memory
Magneto resistive RAM
Giant Magneto resistance
What is MRAMbull Magnetic RAM is a methods of storing data bits using
magnetic charges instead of the electrical charges bull MRAM is a memory (RAM) technology that uses
electron spin to store information MRAM has been called the ideal memory potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk and all this while consuming a very low amount of power
bull MRAM can resist high radiation and can operate in extreme temperature conditions very suited for military and space applications
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
bull Power efficiencyndash MRAM can be the most efficient memory device in power
consumption
bull Ferro-magnetndash Ferro-magnet is the type of material used to create a MTJ
to develop MRAM
Historical Overview
Why MRAM Became an Important Research Topic Universal Memory (Computing amp Electronics)
ldquoInstant-Onrdquo Computing
Read amp Write to Memory Faster
Reduced Power Consumption
Save Data in Case of a Power Failure
Modern MRAM Technology Emerged from Several Technologies Magnetic Core Memory
Magneto resistive RAM
Giant Magneto resistance
What is MRAMbull Magnetic RAM is a methods of storing data bits using
magnetic charges instead of the electrical charges bull MRAM is a memory (RAM) technology that uses
electron spin to store information MRAM has been called the ideal memory potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk and all this while consuming a very low amount of power
bull MRAM can resist high radiation and can operate in extreme temperature conditions very suited for military and space applications
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Historical Overview
Why MRAM Became an Important Research Topic Universal Memory (Computing amp Electronics)
ldquoInstant-Onrdquo Computing
Read amp Write to Memory Faster
Reduced Power Consumption
Save Data in Case of a Power Failure
Modern MRAM Technology Emerged from Several Technologies Magnetic Core Memory
Magneto resistive RAM
Giant Magneto resistance
What is MRAMbull Magnetic RAM is a methods of storing data bits using
magnetic charges instead of the electrical charges bull MRAM is a memory (RAM) technology that uses
electron spin to store information MRAM has been called the ideal memory potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk and all this while consuming a very low amount of power
bull MRAM can resist high radiation and can operate in extreme temperature conditions very suited for military and space applications
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
What is MRAMbull Magnetic RAM is a methods of storing data bits using
magnetic charges instead of the electrical charges bull MRAM is a memory (RAM) technology that uses
electron spin to store information MRAM has been called the ideal memory potentially combining the density of DRAM with the speed of SRAM and non-volatility of FLASH memory or hard disk and all this while consuming a very low amount of power
bull MRAM can resist high radiation and can operate in extreme temperature conditions very suited for military and space applications
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
History of MRAM
bull 1048704 1988 ndash Giant magneto resistive effect is discoveredbull 1048704 1989 - IBM makes breakthroughs in the giant magneto resistive effect in thin-filmbull structuresbull 1048704 1995 ndash Free scale creates first MRAM chip as part of a DARPA initiativebull 1048704 1997 ndash IBM releases first commercially available spin valve in hard drive read headbull 1048704 2000 ndash IBM and Infineon form join MRAM development programbull 1048704 2003 ndash an initial 128Kbit MRAM chip is made with 180nm lithographic processbull 1048704 2004 ndash 16Mbit prototype manufactured by Infineonbull 1048704 Sept 2004 ndash Free scale begins offering MRAMbull 1048704 Nov 2005 ndash Renness Tech and Grandis develop 65 nm MRAM using spin torquebull transferbull 1048704 Dec 2005 ndash Free scale demos MRAM which uses magnesium oxide which reducesbull required write currentsbull 1048704 Feb 2006 ndash Toshiba and NEC announce 16Mbit chip with 200 MBs transfer rate 34nsbull cycle time 785 mm2 size and low 18V requirementbull 1048704 Nov 2007 ndash NEC makes SRAM compatible MRAM with 250MHz speedbull 1048704 Aug 2008 ndash German scientists develop MRAM with write cycles under 1nsbull 1048704 Mar 2011 ndash PTB announces write cycles under 500ps (2GBits)
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
How its work internally
bull The 2 Possible Magnetization States of a Ferromagnetic Element can be Described by a Hysteresis Loop
bull Magnetization of Film vs Magnetic Fieldbull A magnetic field with magnitude greater than
the switching field sets magnetization in direction of applied field
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
MRAM DeviceBit cells arranged in arraybull Reading Transistor of the
selected bit cell turned lsquoonrsquo + current applied in the bit line
bull Writing Transistor of the selected bit cell turned lsquooffrsquo + currents applied in the bit and word lines
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
MRAM Reading amp Writing Process
bull MRAM Utilizes a Wire Directly Over amp Magnetically Coupled to the Magnetic Element
bull A Current Pulse Traveling Down the Wire Creates a Magnetic Field Parallel to the Wire
bull Each Cell is Inductively Coupled with a Write Wire From a Row amp a Column
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Reading A Bit bull Measurement of the bit cell resistance by applying a
current in the lsquobit linersquo
bull Comparison with a reference value mid-way between the bit high and low resistance values
Writing A Bit bull Currents applied in both lines 2 magnetic fields
Polarity of current in the bit lines decides value stored
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
DRAM
bull DYNAMIC random access memorybull Slowbull Needs to be refreshed hence dynamic
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
FRAM
bull Structurally similar to DRAMbull Ferroelectric film made of PZTbull Nonvolatilebull Fast readwrite times
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
SRAM
bull STATIC random access memorybull Faster more reliable than DRAMbull Need not be refreshed hence staticbull Expensive used in CPU cache
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
FLASH MEMORY
bull Non-volatilebull NOR and NANDbull Does not need to be refreshed
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Advantages amp DisadvantagesAdvantages bull MRAM will eliminate the boot up timebull Electronic devices will be more power efficientbull It could enable wireless video in cell phonesbull More accurate speech recognitionbull MP3 instead of hundred on songs MRAM will enable thousand of
songs and moviesbull No worry for unsaved document when power goes outbull In the powerful computer servers that will run the web it could
mean faster surfing and easier downloadbull More memory space will be available to usbull More reliable electronics will be available to us bull high bandwidth and low latency
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Advantages comparing with other RAMs
fast speed cheap densenon-volatile
consume low
powerno need to
refresh
FLASH radic radic
SRAM radic radic
DRAM radic radic
MRAM radic radic radic radic radic radic
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Disadvantages
bull Heat Problem
bull EMI Problem
bull Bit Flip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
Applications
bull Digital camerabull Cellular phonesbull PDAbull Palm pilotbull MP3bull HDTVbull Laptopsbull PCs
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
References
bull httpwwwmram-infocomcompanieshtmlbull Httpcomputerhowstuffworkscomramhtmbull http
wwwwilliams-advcomtoolsmram-technology-reviewphp
bull httpswwwfutureelectronicscomenmemorymramaspx
YOU MAY ASKhellip
YOU MAY ASKhellip
